for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 14 hmc311sc70 / 311sc70e ingap hbt gain block mmic amplifier, dc - 8 ghz v02.1108 general description features functional diagram the hmc311sc70(e) is a gaas ingap heterojunction bipolar transistor (hbt) gain block mmic smt dc to 8 ghz ampli er. packaged in an industry standard sc70, the ampli er can be used as either a cascadable 50 ohm gain stage or to drive the lo port of hmc mixers with up to +15 dbm output power. the hmc311sc70(e) offers 15 db of gain and an output ip3 of +30 dbm while requiring only 54 ma from a +5v supply. the darlington topology results in reduced sensitivity to normal process variations, and yields excellent gain stability over temperature while requiring a minimal number of external bias components. p1db output power: +15 dbm output ip3: +30 dbm gain: 15 db cascadable, 50 ohm i/os single supply: +5v industry standard sc70 package typical applications the hmc311sc70(e) is ideal for: ? cellular / pcs / 3g ? wibro / wimax / 4g ? fixed wireless & wlan ? catv & cable modem ? microwave radio & test equipment electrical speci cations, vs= 5v, rbias= 22 ohm, t a = +25 c parameter min. typ. max. units gain dc - 1.0 ghz 1.0 - 4.0 ghz 4.0 - 6.0 ghz 6.0 - 8.0 ghz 14.0 13.0 12.5 11.0 15.0 15.0 14.5 13.0 db db db db gain variation over temperature dc - 1.0 ghz 1.0 - 4.0 ghz 4.0 - 6.0 ghz 6.0 - 8.0 ghz 0.004 0.007 0.012 0.018 0.007 0.012 0.016 0.022 db/ c db/ c db/ c return loss input / output dc - 8.0 ghz 15 db reverse isolation dc - 8.0 ghz 18 db output power for 1 db compression (p1db) dc - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 6.0 ghz 6.0 - 8.0 ghz 13.5 12.0 10.0 8.0 15.5 15.0 13.0 11.0 dbm dbm dbm dbm output third order intercept (ip3) dc - 2.0 ghz 2.0 - 6.0 ghz 6.0 - 8.0 ghz 30 27 24 dbm dbm dbm noise figure dc - 8.0 ghz 5 db supply current (icq) 55 74 ma note: data taken with broadband bias tee on device output.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 15 output return loss vs. temperature broadband gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. temperature -25 -20 -15 -10 -5 0 5 10 15 20 012345678910 s21 s11 s22 response (db) frequency (ghz) -25 -20 -15 -10 -5 0 012345678910 +25c +85c -40c reverse isolation (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 012345678910 +25c +85c -40c return loss (db) frequency (ghz) -20 -15 -10 -5 0 012345678910 +25c +85c -40c return loss (db) frequency (ghz) 4 6 8 10 12 14 16 18 20 012345678 +25c -40c +85c gain (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 12345678910 +25c +85c -40c noise figure (db) frequency (ghz) hmc311sc70 / 311sc70e v02.1108 ingap hbt gain block mmic amplifier, dc - 8 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 16 power compression @ 6 ghz p1db vs. temperature psat vs. temperature output ip3 vs. temperature power compression @ 1 ghz gain, power, ip3 & supply current vs. supply voltage @ 1 ghz 4 6 8 10 12 14 16 18 012345678910 +25c +85c -40c p1db (dbm) frequency (ghz) 4 6 8 10 12 14 16 18 012345678910 +25c +85c -40c psat (dbm) frequency (ghz) -4 -2 0 2 4 6 8 10 12 14 16 18 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -4 -2 0 2 4 6 8 10 12 14 16 18 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 10 12 14 16 18 20 22 24 26 28 30 32 34 012345678 +25c +85c -40c ip3 (dbm) frequency (ghz) 0 5 10 15 20 25 30 35 40 0 20 40 60 80 4.5 4.75 5 5.25 5.5 gain p1db psat ip3 icq gain (db), p1db (dbm), psat (dbm), ip3 (dbm) icq (ma) vs (vdc) hmc311sc70 / 311sc70e v02.1108 ingap hbt gain block mmic amplifier, dc - 8 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 17 outline drawing absolute maximum ratings collector bias voltage (vcc) +7v rf input power (rfin)(vcc = +3.9v) +10 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 5.21 mw/c above 85 c) 0.34 w thermal resistance (junction to lead) 191 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c part number package body material lead finish msl rating package marking hmc311sc70 low stress injection molded plastic sn/pb solder msl1 [1] 311 hmc311sc70e rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 311 [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c package information electrostatic sensitive device observe handling precautions notes: 1. package body material: low stress injection molded plastic silica and silicon impregnated. 2. lead material: copper alloy 3. lead plating: sn/pb solder 4. dimensions are in inches [millimeters]. 5. dimension does not include moldflash of 0.15mm per side. 6. dimension does not include moldflash of 0.25mm per side. 7. all ground leads must be soldered to pcb rf ground. hmc311sc70 / 311sc70e v02.1108 ingap hbt gain block mmic amplifier, dc - 8 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 18 application circuit pin descriptions pin number function description interface schematic 1, 2, 4, 5 gnd these pins must be connected to rf/dc ground. 3rfin this pin is dc coupled. an off chip dc blocking capacitor is required. 6rfout rf output and dc bias for the output stage. recommended component values component frequency (mhz) 50 900 1900 2200 2400 3500 5200 5800 l1 270 nh 56 nh 22 nh 22 nh 15 nh 8.2 nh 3.3 nh 3.3 nh c1, c2 0.01 f 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf note: 1. select rbias to achieve icq using equation below, rbias > 22 ohm. 2. external blocking capacitors are required on rfin and rfout. icq = vs - 3.8 rbias hmc311sc70 / 311sc70e v02.1108 ingap hbt gain block mmic amplifier, dc - 8 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 19 evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 118040 [1] item description j1 - j2 pcb mount sma connector j3 - j4 dc pin c1 - c3 100 pf capacitor, 0402 pkg. c4 1000 pf capacitor, 0603 pkg. c5 2.2 f capacitor, tantalum r1 22 ohm resistor, 1210 pkg. l1 22 nh inductor, 0603 pkg. u1 hmc311sc70 / hmc311sc70e pcb [2] 117360 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc311sc70 / 311sc70e v02.1108 ingap hbt gain block mmic amplifier, dc - 8 ghz
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